Geometric Mask Rule Check With Favorable and Unfavorable Zones

ABSTRACT

A method includes generating a diffraction map from a plurality of target patterns, generating a favorable zone and an unfavorable zone from the diffraction map, placing a plurality of sub-resolution patterns in the favorable zone, and performing a plurality of geometric operations on the plurality of sub-resolution patterns to generate modified sub-resolution patterns. The modified sub-resolution patterns extend into the favorable zone, and are away from the unfavorable zone.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.17/386,737, filed Jul. 28, 2021, and entitled “Geometric Mask Rule CheckWith Favorable and Unfavorable Zones,” which claims the benefit of theU.S. Provisional Application No. 63/188,196, filed on May 13, 2021, andentitled “Method for Performing Mask Rule Check with Favorable andUnfavorable Zone,” which applications are hereby incorporated herein byreference.

BACKGROUND

In the formation of lithography masks, which are used for formingpatterns for integrated circuits, First Order Diffraction Map (FODM) wasused to generate seeds for scattering pattern bars and otherSub-Resolution Assistant Features (SRAFs). The seeds may be modifiedthrough relocation, sizing, merging, or separation in order to pass maskrule check (MRC) criterial. This ensures that the patterns meet themanufacturable requirement, such as minimum width, minimum space,minimum area, no acute angle, etc., of the mask-making processes andtools, and hence the lithography masks can be manufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1 through 8 illustrate the intermediate stages in the generationof patterns for a lithography mask in accordance with some embodiments.

FIGS. 9 through 12 illustrate the cross-sectional views of intermediatestages in the formation of some patterns on integrated circuit componentin accordance with some embodiments.

FIG. 13 illustrates a process flow for forming a lithography mask inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

A method of forming Sub-Resolution Assistance Features (SRAFs) (whichare also referred to as scattering bars) is provided. The methodincludes laying out target patterns that are to be implemented on awafer, generating a diffraction map from the target patterns,determining favorable zones and unfavorable zones from the diffractionmap, generating initial patterns (seeds) in the favorable zones, andenlarging the initial patterns so that the enlarged patterns may passthe minimum width or/and the minimum area constrain of the mask rulechecks. Since the enlargement may cause the degradation of opticalperformance, a pattern modification process is performed to modify thepatterns, so that the resulting patterns no longer extend into theunfavorable zone. By keeping the patterns separated from the unfavorablezones, the modified patterns result in a better optical performance, andthe target patterns may be implemented better on a photo resist.Embodiments discussed herein are to provide examples to enable making orusing the subject matter of this disclosure, and a person havingordinary skill in the art will readily understand modifications that canbe made while remaining within contemplated scopes of differentembodiments. Throughout the various views and illustrative embodiments,like reference numbers are used to designate like elements. Althoughmethod embodiments may be discussed as being performed in a particularorder, other method embodiments may be performed in any logical order.

FIGS. 1 through 8 illustrate the intermediate stages in the generationof patterns for a photo lithography mask in accordance with someembodiments of the present disclosure. The corresponding processes arealso reflected schematically in the process flow 200 shown in FIG. 13 .

Referring to FIG. 1 , target patterns 20 are generated/laid out. Therespective process is illustrated as process 202 in the process flow 200as shown in FIG. 13 . Throughout the description, the term “targetpatterns” refers to the patterns of the target features that are to beimplemented on integrated circuit components, which include and are notlimited to, device wafers, interposer wafers, package substrates,reconstructed wafers, and the like. The target features may be any ofthe features that are to be formed, which include, and are not limitedto, dielectric regions, semiconductor regions, metallic regions, or thelike. Also, the target patterns may be formed on etching masks such asphoto resists, which target patterns on the etching masks may then betransferred to the integrated circuit components.

In order to implement the patterns on the integrated circuit components,the target patterns are to be formed on a photo lithography mask, suchas the photo lithography mask 40 shown in FIGS. 9 and 10 . The photolithography mask includes transparent portions and opaque portions, witheither the transparent portions or the opaque portions including thetarget patterns. The photo lithography mask is used in a lithographyprocess, in which a light beam is projected on the photo lithographymask, so that an underlying photo sensitive material such as a photoresist is exposed. After the exposure and a subsequent developmentprocess, the target patterns are transferred into the photo sensitivematerial, which may then be used as an etching mask to form the targetfeatures on the integrated circuit components.

Due to optical effects, especially with the increasing down-scaling ofthe integrated circuits, the target features may not be implemented onthe integrated circuit components accurately. For example, the shapes,the sizes, the spacings, etc., may be distorted. Sub-ResolutionAssistant Features (SRAFs) may be used to help to more accuratelyimplement the target features on the integrated circuit components. TheSRAFs are formed on the photo lithography masks, and have sizes smallerthan the resolution of the respective lithography tool and process. Forexample, when a 193 nm light beam is used for light exposure withNumerical Aperture (NA) equaling to 0.9 combined with properillumination shape, the minimum resolution may have pitch equaling to107 nm and width equaling to about 40 nm, and the features having atleast one of lengths and widths smaller than about 20 nm aresub-resolution features. Although the sub-resolution assistant featuresare formed on the photo lithography masks, the resulting photo resist,after development, will not have these patterns. On the other hand, thetarget patterns will be formed on the photo resist with improvedaccuracy due to the help of the sub-resolution assistant features.Alternatively stated, although the sub-resolution assistant features arenot on the photo resist, the patterns in the photo resist are closer tothe patterns on the photo lithography mask due to the help of thesub-resolution assistant features.

Referring again to FIG. 1 , two example target patterns 20 with squareshapes are shown as an example. In actual circuits, however, thepatterns may have any shape including, and not limited to, rectangles,hexagons, octagons, circles, ovals, or the like, or combination of theseshapes. There may also be a much greater number of target patterns in acircuit. The concept of the embodiments, however, may be explained usingsimple target patterns.

With target patterns 20 being provided, a diffraction map is generatedaccording to the certain illumination shape which is used forlithography process. The respective process is illustrated as process204 in the process flow 200 as shown in FIG. 13 . A portion of anexample diffraction map 22 is shown in FIG. 2 . Diffraction map 22includes the distinctive pattern of light and dark fringes, rings, etc.,formed due to the diffraction from target pattern 20. For example, ifholes are formed in an opaque plate, and the holes have the shapes andthe sizes of the target patterns, when a light beam (with a certainwavelength) is projected on the opaque plate, diffraction map 22 may beformed on another plate behind the opaque plate.

In accordance with some embodiments of the present disclosure,diffraction map 22 is generated through simulation, for example, using acomputer with a software configured to simulate the diffractionpatterns. The simulation may have different accuracy level depending onthe requirement. A more accurate simulation takes longer time to finish,and the resulting simulated refraction map is closer to the actualdiffraction map (for example, the one obtained through holes on opaqueplates). In accordance with some embodiments, the simulation may be afirst-order simulation that with relatively lower accuracy, but takesshorter time to finish. The resulting first-order diffraction map stillhas some difference from the actual diffraction map, while it may stillbe accurate enough for implementing the embodiments of the presentdisclosure. The resulting diffraction map may thus be referred to as afirst-order Diffraction Map (FODM) if a first-order simulation isperformed. In accordance with other embodiments, the diffraction map maybe generated with higher-order accuracy, and thus may be a second-orderdiffraction map, third-order diffraction map, or the like. In accordancewith yet other embodiments, the diffraction map may be obtained usingother methods, such as forming actual patterns on an opaque plate, andprojecting a light beam on the opaque plate to obtain the diffractionmap directly. All of these methods for generating the diffraction mapare in the scope of the present disclosure.

As shown in FIG. 2 , diffraction map 22 includes bright patterns 24,which include bright patterns 24A, 24B, 24C, and more, which are notshown. Bright patterns 24A are the patterns of target patterns 20 withdistortion caused by optical effect, which is to be corrected by theembodiments of the present disclosure. Bright patterns 24B and 24C arethe interference patterns. There may be more bright patterns outsidebright patterns 24C. From inner bright patterns 24A to outer brightpatterns 24B and 24C, the brightness decreases gradually. The patternsoutside of bright pattern 24C may be too dim to distinguish, however.Furthermore, the outer bright patterns are closer to other nearbypatterns (not shown), and may be affected by the bright patterns of thenearby pattern. Accordingly, in accordance with some embodiments, brightpattern 24A and 24B, and sometime bright patterns 24A, 24B and 24C, maybe adopted by the embodiments of the present disclosure, while the restof outer bright patterns are ignored in accordance with some embodimentsof the present disclosure.

Diffraction map 22 further includes dark patterns 26, which include darkpatterns 26A, 26B, 26C, etc., between bright patterns 24. It isappreciated that although FIG. 2 illustrates that there are clearboundaries between bright patterns 24 and dark patterns 26, FIG. 2 isschematic, and in the actual diffraction map, the middle portions ofbright patterns 24 are brightest, and the middle portions of darkpatterns 26 are darkest. The transition from bright patterns 24 to darkpatterns 26 is gradual, and there are no clear boundaries in between.

FIG. 3 illustrates the generation of zone map 32, which includesfavorable zone(s) 30 and unfavorable zones 28 (including 28A and 28B) inaccordance with some embodiments. The respective process is illustratedas process 206 in the process flow 200 as shown in FIG. 13 . It isappreciated that although one favorable zone 30 and two unfavorablezones 28 are shown as an example, the total count of the favorable zone30 may be any number equal to or greater than one, and the total countof the unfavorable zones 28 may be any number equal to or greater thanone. Favorable zones 30 are generated based on bright patterns 24 (FIG.2 ), and may include the parts of the bright patterns 24 whosebrightness values exceeding a first pre-determined brightness value,which is discussed in subsequent paragraphs. Unfavorable zones 28 aregenerated based on dark patterns 26 (FIG. 2 ), and may include the partsof the dark patterns 26 whose brightness values lower than a secondpre-determined brightness value, which is discussed in subsequentparagraphs.

Favorable zones 30 are the preferred zones in which the subsequentlyformed sub-threshold assistant features are to be placed, and theformation of sub-threshold assistant features in these regions help theformation of target features, and reduces undesirable optical effect.Unfavorable zones 28 are the zones in which the placement of thesubsequently formed sub-threshold assistant features will worsen theundesirable optical effect. Accordingly, unfavorable zones 28 are alsoforbidden zones in which the formation of sub-threshold assistantfeatures is forbidden.

In accordance with some embodiments, the determination/generation offavorable zones 30 and unfavorable zones 28 is based on absolute(threshold) brightness values. For example, two brightness values B1 andB2 may be predetermined, with brightness value B2 being greater than orequal to brightness value B1. When the brightness values at certainpositions of diffraction map 22 are lower than brightness value B1, thecorresponding positions belong to an unfavorable zone 28. When thebrightness values at certain positions of diffraction map 22 are higherthan brightness value B2, the corresponding positions belong to afavorable zone 30. In accordance with some embodiments, brightness valueB1 is lower than brightness value B2. In the resulting zone map,favorable zones 30 are spaced apart from the neighboring unfavorablezones 28, as shown in FIG. 3 . The difference (B2−B1) determines thespacings (such as spacings S1 and S2 in FIG. 3 ) between neighboringfavorable zones 30 and unfavorable zones 28, and the brightness valuesB1 and B2 determine the widths (such as widths W1A, W1B, and W2 in FIG.3 ) of unfavorable zones 28 and favorable zones 30, respectively. Inaccordance with alternative embodiments, values B1 and B2 are equal toeach other. Accordingly, favorable zones 30 touch the correspondingneighboring unfavorable zones 28. Brightness value B1 is generally setnot to be greater than brightness value B2 to avoid ambiguity in whethera certain position belongs to an unfavorable zone 28 or a favorable zone30.

In accordance with alternative embodiments, the determination offavorable zones 30 and unfavorable zones 28 is based on relativebrightness values. It is appreciated that the determination of relativebrightness values may have many methods, which are in the scope of thepresent disclosure. The relative brightness values may be determinedbased on the highest brightness value of bright patterns, or based onboth of the highest brightness value of a bright pattern(s) and thelowest brightness value of a dark pattern(s). In accordance with someexample embodiments, the brightness value BBrig of the brightest pointof bright patterns 24 is used as the criteria for generating favorablezones 30 and unfavorable zones 28. (Threshold) Relative brightnessvalues F1 and F2 are also pre-determined, with both of relativebrightness values F1 and F2 being between, and not including, 0 and 1.In accordance with some embodiments, when the brightness values atcertain positions of diffraction map 22 are lower than F1*BBrig, thecorresponding positions are in unfavorable zones 28. Conversely, whenthe brightness values at certain positions of diffraction map 22 arehigher than F2*BBrig, the corresponding positions are in favorable zones30. In accordance with some embodiments, value F1 is lower thanbrightness value F2. The difference (F2−F1) determines the spacings(such as spacings S1 and S2 in FIG. 3 ) between neighboring favorablezones 30 and unfavorable zones 28, and the relative brightness values F1and F2 determine the widths (such as widths W1A, W1B, and W2 in FIG. 3 )of unfavorable zones 28 and favorable zones 30, respectively. Inaccordance with alternative embodiments, relative brightness values F1and F2 are equal to each other. Accordingly, favorable zones 30 touchthe corresponding neighboring unfavorable zones 28. Relative brightnessvalue F1 is generally set not to be greater than relative brightnessvalue F2 to avoid ambiguity in whether a certain position belongs to anunfavorable zone 28 or a favorable zone 30.

Referring to FIG. 4 , target patterns 20 and initial Sub-ResolutionAssistant Features (SRAFs) 34 are added to the zone map 32. Therespective process is illustrated as process 208 in the process flow 200as shown in FIG. 13 . Initial SRAFs 34 are also patterns, which areintended to be formed on a photo lithography mask along with targetpatterns 20. In the subsequent discussion, initial SRAFs 34 are referredto as scattering bars since they are often formed as having bar shapes.Initial scattering bars 34 have lengths and/or widths smaller than theresolution (hence are sub-resolution features) of the lithography tooland process. Accordingly, scattering bars 34 (even after the subsequentmodification) will not be transferred to the resulting integratedcircuit components such as wafers, packages, package substrates, etc. Asa comparison, target features 20 have lateral dimensions greater thanthe resolution, and hence their patterns will be transferred to theresulting integrated circuit components. Although the patterns ofinitial scattering bars 34 are not transferred, their existence on thephoto lithography mask affect the optical effect in light-exposureprocesses, and the transferred patterns on the integrated circuitcomponents are closer in shape and size to the target patterns 20 on thephoto lithography mask.

In subsequent discussion, reference numeral 34 is used to represent bothof the initial scattering bars and the scattering bars aftermodification processes. Letter(s) “M” and “MM” may also be addedfollowing reference numeral “34” to identify the stage of themodification.

The initial scattering bars 34 have beneficial effect on thetransferring of target patterns 20 when initial scattering bars 34 arein bright patterns 24 (FIG. 2 ). Accordingly, initial scattering bars 34are added into favorable zones 30 (FIG. 4 ), which are determined basedon the brightness of the bright patterns 24. In accordance with someembodiments, initial scattering bars 34 are rectangular bars, and someof initial scattering bars 34 may be square bars. In accordance withalternative embodiments, initial scattering bars 34 may have any othershapes including, and not limited to, polygons (such as hexagons,octagons, or the like), circles, ovals, or the like. Initial scatteringbars 34 may also have irregular shapes including the combinations ofcurves, straight lines, and/or the like. Also, an initial scattering bar34 may be different from, or the same as, another initial scattering bar34 in shapes, widths, lengths, etc.

In accordance with some embodiments, all of the initial scattering bars34 are fully inside favorable zones 30. In accordance with alternativeembodiments, some of initial scattering bars 34 may extend slightly outof favorable zones 30, and no scattering bar 34 extends into unfavorablezones 28. Scattering bar 34 may be placed suit to the shape and theextending direction of the respective part of favorable zones 30.Accordingly, some of initial scattering bars 34 may have theirlengthwise directions in the X-direction, and some other scatterings bar34 may have their lengthwise directions in the Y-direction.

Next, a first mask rule check is performed on the patterns that are tobe formed into photo lithography masks. The respective process isillustrated as process 210 in the process flow 200 as shown in FIG. 13 .The first mask rule check is geometric-based, and hence may be performedin a short period of time. The first mask rule check ensures that themanufacturing tool for forming photo lithography masks can form thescattering bars 34 and target patterns 20 on photo lithography masks.For example, the patterns that are too small, too close to each other,or having too small areas cannot be formed on photo lithography masksuccessfully. The mask rule check thus checks the patterns including theinitial scattering bars 34 and target patterns 20 to ensure all maskrules are followed. Since the initial scattering bars 34 are formed assub-resolution features, some of the initial scattering bars 34 mayviolate mask rules and thus fail to pass the mask rule check. Thescattering bars 34 unable to pass mask rule check are referred to asmask-rule violating scattering bars hereinafter. FIG. 4 illustrate someexample mask-rule violating scattering bars 34, which are marked usingnotations 34F. The mask-rule violating scattering bars 34F are alsonumbered by adding a digit following letter “F” in order to distinguishthem from each other.

FIG. 5 illustrates a first scattering bar modification process (alsoreferred to as a mask-rule compliant operation), wherein the mask-ruleviolating scattering bars 34F are enlarged to form modified scatteringbars 34M (including 34M1 through 34M6), so that the modified bars 34Mmay pass mask rule check. The respective process is illustrated asprocess 212 in the process flow 200 as shown in FIG. 13 . Althoughenlargement is used as an example of the mask-rule compliant operation,the mask-rule compliant operation may also include relocation and/ormerging. All of the scattering bars 34 in FIG. 6 are identified usingletter “M” to distinguish them from the initial scattering bars in FIG.4 , regardless of whether these scattering bars are modified or not fromthe scattering bars shown in FIG. 4 . The first scattering barmodification process is geometric-based. The modification may includeenlarging the initial scattering bars 34 either in the X-direction,Y-direction, or in both of the X-direction and the Y-direction. Themodification may also include replacing a small scattering bar 34 with alarger scattering bars 34. FIG. 5 illustrates an example modificationprocess in which the mask-rule violating scattering bars 34F areextended in the +X and −X directions, while they may also extend in the+Y direction and/or −Y direction. Furthermore, the mask-rule violatingscattering bars 34F may also be relocated, for example, when the failurein mask rule check is caused by the too-small spacing between themask-rule violating scattering bars 34F. The scattering bar modificationprocess may be performed through a software executed in a computer.

The scattering bar modification process is performed for the purpose ofpassing the mask rule check, while the effect of the scattering barmodification process on the optical performance is not considered. Theeffect of the modified scattering bars 34M on the optical performancemay be determined through simulation. The simulation, however, takeslong time to finish, especially when large integrated circuit componentshaving complicated patterns are simulated. In accordance with someembodiments of the present disclosure, unfavorable zones 28 are used toat least limit the adverse effect on the optical performance caused bythe scattering bar modification process, or improve the opticalperformance significantly.

FIG. 5 illustrates some examples of the modified scattering bars 34M.For example, the modified scattering bars 34M1, 34M2, 34M3, 34M4, and34M6 extend into (and overlap) unfavorable zone 28A, and the modifiedscattering bar 34M5 extends into (and overlap) unfavorable zone 28B.There may also be some modified scattering bars 34M that do not extendinto unfavorable zones 28A and 28B after the first scattering barmodification process.

Since unfavorable zones 28 are determined as including the dark patterns26 in the diffraction map, when the modified scattering bars 34M extendinto unfavorable zones 28, the optical performance will be adverselyaffected. Accordingly, an unfavorable zone check process is performed toidentify the scattering bars 34M that extend into the unfavorable zones28. The respective process is illustrated as process 214 in the processflow 200 as shown in FIG. 13 . The identified scattering bars 34M thatextend into the unfavorable zones 28 are referred to as unfavorablepatterns or unfavorable scattering bars.

When one or more of the modified scattering bars 34M is identified asunfavorable scattering bars, a second scattering bar modificationprocess is performed to modify unfavorable scattering bars again, and tokeep the resulting scattering bars 34 out of the unfavorable zones 28.The respective process is illustrated as process 216 in the process flow200 as shown in FIG. 13 .

It is appreciated that the unfavorable zone check process 214 is ageometric checking process, which may be performed fast. As acomparison, if the optical performance of the modified scattering bars34M are to be determined through simulation, the simulation will takelong time. Accordingly, the optical performance determining process inaccordance with the embodiments of the present disclosure is much moreefficient.

The second scattering bar modification process may include a pluralityof geometric-based operations including, and not limited to, shrinking,relocating, merging, removing, and the like, and/or combinationsthereof. The resulting modified scattering bars are referred to as 34MM,which includes 34MM1 through 34MM5. All of the scattering bars in FIG. 6are identified as including “MM” to distinguish them from the scatteringbars in FIG. 5 , regardless of these scattering bars are modified or notfrom the scattering bars shown in FIG. 5 .

In accordance with some embodiments, the modified scattering bars 34M1(FIG. 5 ) extends into unfavorable zone 28A, and is shrunk in adirection away from unfavorable zone 28A in the second scattering barmodification process. The resulting modified scattering bars 34MM1 (FIG.6 ) no long extends into unfavorable zone 28A. The modified scatteringbars 34M2 and 34M3 (FIG. 5 ) also extend into unfavorable zone 28A, andare shrunk in directions away from unfavorable zone 28A. The resultingmodified scattering bars 34MM2 and 34MM3 (FIG. 6 ) no long extends intounfavorable zone 28A. The modified scattering bars 34M4 (FIG. 5 )extends into unfavorable zone 28A, and is merged with scattering bar34M7 (which may be mask-rule violating or mask-rule compliant) to form anew modified scattering bar 34MM8 (FIG. 6 ). In accordance with someembodiments, the merging may be achieved by resizing (enlarging orshrinking) and/or relocating one or both of the merged scattering bars34M4 and 34M7. The merging causes the merged size to be larger, andhence the merged pattern may pass the minimum area constrain of the maskrule check. The modified scattering bars 34M5 (FIG. 5 ) extends intounfavorable zone 28B, and is shrunk in a direction away from unfavorablezone 28B. The resulting modified scattering bars 34MM5 (FIG. 6 ) no longextends into unfavorable zone 28B. The modified scattering bars 34M6(FIG. 5 ) extends into unfavorable zone 28A, and is removed. FIG. 6illustrates where the removed scattering bar 34M6 was using a dashedbar.

The second scattering bar modification process may (or may not) beperformed with the mask rules taken into account in accordance with someembodiments. For example, the shrinking may be performed so that theresulting shrunk scattering bars 34M1 and 34M2 are still great enough topass the minimum width or/and the minimum area constrain of the maskrule check. In accordance with some embodiment, the modification isbased on certain pre-determined rules, for example, shrinking to acertain percentage (such as between about 70 percent and about 90percent) of the original length. The resulting modified scattering bars34MM may or may not pass mask rule check in accordance with theseembodiments, and further mask rule check, unfavorable zone check, andthe corresponding modification processes may be needed.

As the result of the second scattering bar modification process, some orall of the modified scattering bars 34MM1 may be fully inside favorablezones 30. In accordance with alternative embodiments, some of themodified scattering bars 34MM are fully inside favorable zones 30, whilesome other scattering bars 34MM (such as 34MM2 and 34MM3) are partiallyinside favorable zones 30, and partially out of favorable zones 30.These scattering bars 34MM, however, are outside of unfavorable zones28.

Referring to the process flow 200 as shown in FIG. 13 , a rework processmay be performed. The rework process may include processes 218 through224, and may also include processes 212 and 214 if processes loop backto processes 212 and 214. The rework process is discussed below.

In accordance with some embodiments, after the second scattering barmodification process 216, a second mask rule check process may beperformed to ensure that the twice-modified scattering bars don'tviolate mask rules. The respective process is illustrated as process 218in the process flow 200 as shown in FIG. 13 . For example, the shrinkingof scattering bars may cause scattering bars 34MM to be too small again.If the second mask rule check is passed with no scattering bar 34MMfailing, as shown in process 220 in process flow 200, the process flowmay go to process 222 in FIG. 13 . Otherwise, the process loops back toprocess 212 in the process flow 200 as shown in FIG. 13 , and anotherscattering bar enlargement process 212, the subsequent unfavorable zonecheck process 214, scattering bar modification process 216, etc., areperformed again.

In accordance with some embodiments, after passing the second scatteringbar modification process, a second unfavorable zone check process 222may be performed to ensure that the twice-modified scattering bars donot fall into unfavorable zones again. The respective process isillustrated as process 222 in the process flow 200 as shown in FIG. 13 .For example, when relocating a scattering bar away from unfavorable zone28A, the scattering bar may extend into unfavorable zone 28B. Thescattering bars that fall into unfavorable zones again will be markedand modified again. As shown in process 224, if all scattering bars 34pass the second unfavorable zone check process 222, the patternsgenerated in preceding processes may be used to form a photo lithographymask. Otherwise, if one or more scattering bars 34 fail to pass thesecond unfavorable zone check process 222, the process loops back toprocess 216 in the process flow 200 as shown in FIG. 13 , and anotherscattering bar modification process and the subsequent processes areperformed.

FIGS. 7 and 8 illustrate the scattering bars in a rework process as anexample. In FIG. 7 , the modified scattering bar 34MM3 extends intounfavorable zone 28B. Accordingly, another modification process isperformed to shrink scattering bar 34MM3, and to generate scattering bar34MM3′ as shown in FIG. 8 .

It is appreciated that if the previous processes are improperlyperformed, rework processes may be performed endlessly. For example,relocating a scattering bar away from unfavorable zone 28A causes it toextend into unfavorable zone 28B, and the relocating in the rework maycause it to extend back into unfavorable zone 28B again. To prevent thisfrom happening, some considerations may be taken into the scattering barmodification process in the rework. For example, assuming a previouslymodified scattering bar still fails in the unfavorable zone checkprocess 224, in the resulting re-execution of scattering barmodification process 216, a new modification operation different fromthe previous modification operation will be performed. For example, ifthe previous modification operation was a shrinking operation, the newlyperformed modification operation may be relocation, merging, or thelike. Alternatively, the same operation may be performed but withdifferent parameters. For example, shrinking rate may be changed from20% to 15%, or shrinking value is changed from 2.0 nm to 1.5 nm. Thismay prevent the cyclic operation. In accordance with some embodiments, apre-determined number of reworks (such as 1, 2, or 3, or more) may beallowed to be performed, with the operations in the reworks differentfrom the previous operations. If there are still scattering bar(s) 34fail to pass the unfavorable zone check process and/or mask rule checkprocess after the pre-determined number is reached, these scatteringbars will be removed to end the loop, or be marked and reported as anerror for further handling.

In accordance with some embodiments, if one or more previously modifiedscattering bar still fail in mask rule check process 220 or theunfavorable zone check process 224, the failed scattering bars areremoved to prevent the further rework, and to prevent cyclic reworks,without further try, or may be marked and reported as an error forfurther handling.

In above-discussed processes, a two-step scattering bar modificationprocess is performed, which includes enlarging scattering bars 34, andthen performing modification processes, so that the resulting modifiedscattering bars 34 are kept out of the unfavorable zones. In accordancewith alternative embodiments, a one-step scattering bar modificationprocess is performed, wherein in the enlargement of the mask-ruleviolating scattering bars, the unfavorable zones 28 are considered, andthe enlargement is toward selected directions away from the nearestunfavorable zones 28. The scale of the enlargement in the selecteddirection is also controlled, so that the resulting enlarged scatteringbars will not extend into unfavorable zones 28. The subsequent mask rulecheck may be performed or may be skipped. The subsequent unfavorablezone check is no longer needed.

In accordance with some embodiments, as discussed referring to FIGS. 1through 8 , a pattern-generation process includes generating adiffraction map including both of unfavorable zones 28A and 28B, andrework processes are performed. It is appreciated that unfavorable zone28A has a greater effect on the optical performance than unfavorablezone 28B. This means a scattering bar has smaller adverse effect onoptical performance extending into unfavorable zone 28B than extendinginto unfavorable zone 28A. Accordingly, in accordance with someembodiments, to improve the efficiency in the generation of patterns,unfavorable zone 28A is generated, while unfavorable zone 28B is notgenerated to compromise efficiency and accuracy. In accordance withthese embodiments, rework may be, or may not be performed. In accordancewith alternative embodiments, both of unfavorable zones 28A and 28B aregenerated, and no rework process is performed. Alternatively, thescattering bar will be marked and reported as an error for furtherhandling after a certain number (such as 5) of times of iteration ofrework.

The target patterns 20 and the scattering patterns 34MM (FIG. 6 or FIG.8 ) are then used to form a photo lithography mask 40 as shown in FIGS.9 and 10 . It is appreciated that a photo lithography mask differentfrom what is shown may be used. For example, an extreme Ultraviolet(EUV) mask may be adopted. The respective process is illustrated asprocess 226 in the process flow 200 as shown in FIG. 13 . FIG. 9illustrates a top view of a portion of photo lithography mask 40, inwhich scattering bars 34MM (which are also scattering patterns 34) andtarget patterns 20 are formed. The favorable zones 30 and unfavorablezones were used to assist the generation of scattering bars 34, and arenot formed in photo lithography mask 40.

FIGS. 10 through 12 illustrate the cross-sectional view of intermediatestages in the transferring of the patterns in photo lithography mask 40into integrated circuit component 44 in accordance with someembodiments. Referring to FIG. 10 , lithograph mask 40 includes opaqueportions and transparent portions. In accordance with some embodiments,the target patterns 20 and scattering bars 34 are formed as the opaqueportions, which are between transparent portions 36, as shown in FIG. 10. In accordance with alternative embodiments, target patterns 20 andscattering bars 34 may be formed as transparent portions of thelithograph mask, with opaque portions separating them from each other.FIG. 10 illustrates the reference cross-section 10-10 in FIG. 9 .

Integrated circuit component 44 is placed underneath photo lithographymask 40. Integrated circuit component 44 may be a device wafer, aninterposer wafer, a package substrate strip, a reconstructed wafer, orthe like. Integrated circuit component 44 includes target layer 46,which may be a dielectric layer, a semiconductor layer, a conductivelayer (such as a metal layer), or the like. Photo resist 48 is appliedover target layer 46. Light 50 is projected on lithograph mask 40, sothat photo resist 48 is exposed.

After the light-exposure of photo resist 48, photo lithography mask 40is moved away. Photo resist 48 is baked and developed, and some portionsare removed. The resulting photo resist 48 includes the patterns oftarget patterns 20, but not the patterns of scattering patterns 34, asshown in FIG. 11 . In a subsequent process, photo resist 48 is used toetch the underlying target layer 46. The resulting etched target layer46 again includes the patterns 20 of target patterns 20, but not thepatterns of scattering patterns 34. Photo resist 48 is then removed, andthe resulting structure is shown in FIG. 12 . In the above-discussedprocesses, scattering patterns 34 result in more accurate transferringof target patterns 20 into target layer 46, although scattering patterns34 are not formed in target layer 46.

In above-discussed processes, the processes shown in FIGS. 1 through 8may be performed using a computer with software (programing codes) andhardware. The software includes the tools for performing the tasksincluding, and not limited to, generating (laying out) target patterns,simulating diffraction maps, generating favorable zones and unfavorablezones, generating initial scattering patterns, performing mask rulechecks, enlarging scattering patterns, performing unfavorable zonechecks, modifying the scattering zones, and the like. The program codesof the software and the results such as the diffraction map, thefavorable zones and unfavorable zones, the target patterns and thescattering patterns may be embodied on a non-transitory storage media,such as a hard drive, a disc, or the like, and may be shipped formanufacturing photo lithography masks.

In above-illustrated embodiments, the advanced lithography process,method, and materials described above can be used in many applications,including fin-type field effect transistors (FinFETs). For example, thefins may be patterned to produce a relatively close spacing betweenfeatures, for which the above disclosure is well suited. In addition,spacers used in forming fins of FinFETs, also referred to as mandrels,can be processed according to the above disclosure.

The embodiments of the present disclosure have some advantageousfeatures. By generating favorable and unfavorable zones, scattering barsare generated, and are separated from unfavorable zones. The opticaleffect is thus optimized. The optimization of the optical effect isthrough geometric checking of the scattering bars to decide whether theyextend into the unfavorable zones, and hence is fast. This saves thetime that is otherwise spent on performing time-consuming simulations todetermine the optical effect of the scattering bars.

In accordance with some embodiments of the present disclosure, a methodcomprises generating a diffraction map from a target pattern, whereinthe diffraction map comprises a bright pattern and a dark pattern;generating a favorable zone and an unfavorable zone from the brightpattern and the dark pattern; placing a first plurality ofsub-resolution patterns in the favorable zone; performing a mask-rulecompliant operation (which may be an enlargement operation, a relocationoperation, or a merging operation) on the first plurality ofsub-resolution patterns to generate a second plurality of sub-resolutionpatterns, wherein a first group of sub-resolution patterns in the firstplurality of sub-resolution patterns are enlarged; performing anunfavorable zone check process to find unfavorable patterns, wherein theunfavorable patterns are enlarged first group of sub-resolution patternsthat extend into the unfavorable zone; and performing a geometricoperation on the second plurality of sub-resolution patterns to generatea third plurality of sub-resolution patterns, wherein unfavorablepatterns are separated from the unfavorable zone. In an embodiment, themethod further comprises a mask rule check process to find the firstgroup of sub-resolution patterns from the first plurality ofsub-resolution patterns, wherein the first group of sub-resolutionpatterns are mask-rule violating patterns. In an embodiment, the firstplurality of sub-resolution patterns further comprise a second group ofsub-resolution patterns that are mask-rule compliant, and in theenlargement operation, the second group of sub-resolution patterns areun-modified. In an embodiment, the geometric operation comprisesshrinking one of the unfavorable patterns. In an embodiment, thegeometric operation comprises relocating one of the unfavorablepatterns. In an embodiment, the geometric operation comprises removingone of the unfavorable patterns. In an embodiment, the geometricoperation comprises merging one of the unfavorable patterns with anotherone of the plurality of sub-resolution patterns. In an embodiment, themethod further comprises manufacturing a photo lithography mask, whereinthe target pattern and the third plurality of sub-resolution patternsare formed in the photo lithography mask; and using the photolithography mask to form an integrated circuit component, wherein thetarget pattern is implemented on the integrated circuit component, andthe third plurality of sub-resolution patterns are not implemented onthe integrated circuit component. In an embodiment, the method furthercomprises performing a mask rule check process on the third plurality ofsub-resolution patterns. In an embodiment, the method further comprisesenlarging additional mask-rule violating scattering bars in the thirdplurality of sub-resolution patterns to generate a fourth plurality ofsub-resolution patterns. In an embodiment, the method further comprisesperforming an additional unfavorable zone check on the fourth pluralityof sub-resolution patterns.

In accordance with some embodiments of the present disclosure, a methodcomprises generating a diffraction map from a plurality of targetpatterns; generating a favorable zone and an unfavorable zone from thediffraction map; placing a plurality of sub-resolution patterns in thefavorable zone; and performing a plurality of geometric operations onthe plurality of sub-resolution patterns to generate modifiedsub-resolution patterns, wherein the modified sub-resolution patternsextend into the favorable zone, and are away from the unfavorable zone.In an embodiment, the diffraction map comprises a bright region and adark region, and the favorable zone comprises a part of the brightregion, and the unfavorable zone comprises a part of the dark region. Inan embodiment, the method further comprises determining a firstthreshold brightness value and a second threshold brightness value equalto or higher than the first threshold brightness value, wherein regionsin the diffraction map with brightness values lower than the firstthreshold brightness value are in unfavorable zones, and wherein regionsin the diffraction map with brightness values higher than the secondthreshold brightness value are in favorable zones. In an embodiment, theplurality of geometric operations comprise an enlargement operation toenlarge some of the plurality of sub-resolution patterns and to generateenlarged patterns; and an additional geometric operation to separate theenlarged patterns from the unfavorable zone. In an embodiment, themethod further comprises performing a mask rule check process to findmask-rule violating scattering bars in the plurality of sub-resolutionpatterns that have gone through some of the plurality of geometricoperations. In an embodiment, the method further comprises anunfavorable zone check process to find unfavorable patterns in theplurality of sub-resolution patterns, wherein the unfavorable patternsextend into the unfavorable zone.

In accordance with some embodiments of the present disclosure, a methodcomprises generating an unfavorable zone and a scattering pattern;determining whether the scattering pattern is overlapped with theunfavorable zone; modifying the scattering pattern to generate amodified scattering pattern, wherein the modified scattering pattern isseparated from the unfavorable zone; forming a photo lithography maskcomprising the modified scattering pattern; and using the photolithography mask to perform a light-exposure process on a photo resist.In an embodiment, the method further comprises generating a diffractionmap from a target pattern, wherein the target pattern is also in thephoto lithography mask; and determining the unfavorable zone and afavorable zone from the diffraction map, wherein the scattering patternis placed in the favorable zone. In an embodiment, the modifying thescattering pattern comprises enlarging the scattering pattern.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: generating a diffractionmap; generating a first plurality of sub-resolution patterns in thediffraction map; selecting a first sub-resolution pattern and a secondsub-resolution pattern from the first plurality of sub-resolutionpatterns, wherein the selecting is based on geometric locations of thefirst plurality of sub-resolution patterns; and performing modificationoperation to modify the first plurality of sub-resolution patternscollectively as a second plurality of sub-resolution patterns, whereinthe first sub-resolution pattern is modified to generate a thirdsub-resolution pattern, and wherein the second sub-resolution patternremains to be un-modified.
 2. The method of claim 1 further comprising,before the first plurality of sub-resolution patterns is generated:placing a third plurality of sub-resolution patterns in the diffractionmap; performing a mask rule check process on the third plurality ofsub-resolution patterns; and modifying the third plurality ofsub-resolution patterns based on results of the mask rule check processto generate the first plurality of sub-resolution patterns.
 3. Themethod of claim 2, wherein a position, a size, and a shape of the secondsub-resolution pattern remain same as before the modification operation.4. The method of claim 1, wherein the modification operation comprisesan operation selected from the group consisting of enlargement,relocation, and combinations thereof.
 5. The method of claim 1, whereinthe modification operation comprises shrinking, merging, or removingprocesses.
 6. The method of claim 5, wherein the modification operationfurther comprises removing an additional sub-resolution pattern in thefirst plurality of sub-resolution patterns.
 7. The method of claim 5,wherein the modification operation comprises merging two of the firstplurality of sub-resolution patterns.
 8. The method of claim 1, whereinthe diffraction map comprises a bright pattern and a dark pattern, andthe method further comprises generating a favorable zone and anunfavorable zone from the bright pattern and the dark pattern,respectively.
 9. The method of claim 8, wherein the selecting the firstsub-resolution pattern comprises finding the first plurality ofsub-resolution patterns that extend into the unfavorable zone.
 10. Themethod of claim 1 further comprising: manufacturing a photo lithographymask, wherein the second plurality of sub-resolution patterns are formedin the photo lithography mask; and using the photo lithography mask toform an integrated circuit component.
 11. The method of claim 10,wherein the second plurality of sub-resolution patterns that are in thephoto lithography mask are not implemented on the integrated circuitcomponent.
 12. A method comprising: generating a diffraction map from aplurality of target patterns, wherein the diffraction map comprises afavorable zone and an unfavorable zone encircling the favorable zone;placing a first plurality of sub-resolution patterns in the favorablezone; modifying the first plurality of sub-resolution patterns togenerate a second plurality of sub-resolution patterns; selecting afirst sub-resolution pattern and a second sub-resolution pattern fromthe first plurality of sub-resolution patterns; modifying a size of thefirst sub-resolution pattern, wherein the second sub-resolution patternremains same in size and position; and implement the plurality of targetpatterns on a semiconductor wafer.
 13. The method of claim 12 furthercomprising: after the size of the first sub-resolution pattern ismodified, performing a mask rule check process on the firstsub-resolution pattern and the second sub-resolution pattern.
 14. Themethod of claim 13 further comprising further modifying the firstsub-resolution pattern that has been modified, wherein the secondsub-resolution pattern remains the same in size and position.
 15. Themethod of claim 12, wherein the diffraction map comprises bright regionsand dark regions, and the method further comprises generating thefavorable zone comprising a part of the bright regions, and generatingthe unfavorable zone comprising a part of the dark regions.
 16. Themethod of claim 15, wherein the selecting the first sub-resolutionpattern and the second sub-resolution pattern is determined based onwhether the first sub-resolution pattern and the second sub-resolutionpattern extend into the unfavorable zones.
 17. The method of claim 16further comprising determining a first threshold brightness value and asecond threshold brightness value, wherein regions in the diffractionmap with brightness values lower than the first threshold brightnessvalue are in the unfavorable zones, and wherein regions in thediffraction map with brightness values higher than the second thresholdbrightness value are in the favorable zones.
 18. A method comprising:generating a diffraction map from a target pattern; generating a firstscattering pattern and a second scattering pattern, wherein the firstscattering pattern and the second scattering pattern are in thediffraction map, and wherein the second scattering pattern has aposition and a size; performing a first modification process, whereinthe first scattering pattern is modified to generate a modifiedscattering pattern; after the first modification process, performing asecond modification process to further modify the modified scatteringpattern and to generate a re-modified pattern, wherein at a time afterthe second modification process, the second scattering pattern remainssame as the second scattering pattern that has the position and thesize; forming a photo lithography mask comprising the second scatteringpattern and the re-modified first scattering pattern; and using thephoto lithography mask to perform a light-exposure process on a photoresist.
 19. The method of claim 18 further comprising determining anunfavorable zone and a favorable zone from the diffraction map, whereinthe first scattering pattern extends into the unfavorable zone, and thesecond scattering pattern is outside of the unfavorable zone.
 20. Themethod of claim 18, wherein each of the first modification process andthe second modification process comprises a resizing operation.